Phase change memory device generating program current and method thereof

A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material...

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Main Authors CHO WOO-YEONG, PARK MU-HUI, CHO BEAK-HYUNG
Format Patent
LanguageEnglish
Published 06.05.2010
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Abstract A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material to program a selected memory cell. The write driver may be configured to provide the program current such that the program current has a plurality of steps. The control unit may be configured to receive step information for adjusting a magnitude and a width of each step of the program current during a test operation and provide the step information to the write driver during a normal operation.
AbstractList A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material to program a selected memory cell. The write driver may be configured to provide the program current such that the program current has a plurality of steps. The control unit may be configured to receive step information for adjusting a magnitude and a width of each step of the program current during a test operation and provide the step information to the write driver during a normal operation.
Author CHO BEAK-HYUNG
PARK MU-HUI
CHO WOO-YEONG
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Snippet A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory...
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Title Phase change memory device generating program current and method thereof
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