Phase change memory device generating program current and method thereof
A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
06.05.2010
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Subjects | |
Online Access | Get full text |
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Abstract | A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material to program a selected memory cell. The write driver may be configured to provide the program current such that the program current has a plurality of steps. The control unit may be configured to receive step information for adjusting a magnitude and a width of each step of the program current during a test operation and provide the step information to the write driver during a normal operation. |
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AbstractList | A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material to program a selected memory cell. The write driver may be configured to provide the program current such that the program current has a plurality of steps. The control unit may be configured to receive step information for adjusting a magnitude and a width of each step of the program current during a test operation and provide the step information to the write driver during a normal operation. |
Author | CHO BEAK-HYUNG PARK MU-HUI CHO WOO-YEONG |
Author_xml | – fullname: CHO WOO-YEONG – fullname: PARK MU-HUI – fullname: CHO BEAK-HYUNG |
BookMark | eNqNzL0KwjAUhuEMOvh3DwechUQHXUWUjoI6l0P6NSmYk3IaBe_eDl6A07s8vHMzkSyYmeoaeQD5yBJACSnrhxq8Ow8KECiXTgL1moNyIv9ShRRiaUZcYm6oRChyuzTTlp8DVr8uzPpyvp-qDfpcY-jZj7dSP25b66xzdn9wR7f7T30BqFY3Cw |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences Physics |
ExternalDocumentID | US2010110781A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2010110781A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:13:44 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2010110781A13 |
Notes | Application Number: US20090654338 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100506&DB=EPODOC&CC=US&NR=2010110781A1 |
ParticipantIDs | epo_espacenet_US2010110781A1 |
PublicationCentury | 2000 |
PublicationDate | 20100506 |
PublicationDateYYYYMMDD | 2010-05-06 |
PublicationDate_xml | – month: 05 year: 2010 text: 20100506 day: 06 |
PublicationDecade | 2010 |
PublicationYear | 2010 |
Score | 2.7754557 |
Snippet | A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | INFORMATION STORAGE PHYSICS STATIC STORES |
Title | Phase change memory device generating program current and method thereof |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100506&DB=EPODOC&locale=&CC=US&NR=2010110781A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5Kfd40Kj6qLCi5BdPm2UMRmwdBsA22kd5KdrNVQZNiI-K_d3aTaE-97sKyOzD7zex-8w3ADdU54pROtX6ampqJoKK5PLU1ixo9w3Eci2WSbTGyo8R8mFmzFrw3tTBSJ_RbiiOiRzH091Le18v_RyxfcitXt_QNh4q7cDrw1To77go5E1v1h4MgHvtjT_W8QTJRR09yTqQ6bvcec6UtEUgLpf3geSjqUpbroBIewHaM6-XlIbR4rsCe1_ReU2D3sf7yVmBHcjTZCgdrP1wdQRS_IvqQqmqXfAi27A_JuPB68iKFpAWbmdTkK8IqESaS5hmpWkYTEffxYnEM12Ew9SINNzf_s8U8mayfxDiBdl7k_BQIpS5jFhqe95jpZG7aN2jPXVgOxYgg5e4ZdDatdL55-gL2m29z3e5Au_z84peIxiW9kkb8BbfZjds |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fT8IwEL4Q_IFvihpU1CaavS3CfvNAjGwsU2EsMgxvZO2KmuggMmP8772WoTzx2iZNe8n1u2u_-w7gmjY44lSDqq0kMVQDQUV1eGKpJtU13bZtk6WSbRFawch4GJvjEryvamGkTui3FEdEj2Lo77m8r-f_j1ie5FYubugbDs1u_bjtKUV23BRyJpbiddrdaOANXMV126OhEj7JOZHqOM07zJW2bKHPK4Kn546oS5mvg4q_D9sRrpflB1DiWRUq7qr3WhV2-8WXdxV2JEeTLXCw8MPFIQTRK6IPWVbtkg_Blv0hKRdeT16kkLRgM5OCfEXYUoSJJFlKli2jiYj7-Gx6BFd-N3YDFTc3-bPFZDRcP4l-DOVslvEaEEodxkw0PNeYYadO0tKp5kxNm2JEkHDnBOqbVjrdPH0JlSDu9ya9-_DxDPZWX-gNqw7l_POLnyMy5_RCGvQXg4KQyA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Phase+change+memory+device+generating+program+current+and+method+thereof&rft.inventor=CHO+WOO-YEONG&rft.inventor=PARK+MU-HUI&rft.inventor=CHO+BEAK-HYUNG&rft.date=2010-05-06&rft.externalDBID=A1&rft.externalDocID=US2010110781A1 |