Phase change memory device generating program current and method thereof

A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material...

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Bibliographic Details
Main Authors CHO WOO-YEONG, PARK MU-HUI, CHO BEAK-HYUNG
Format Patent
LanguageEnglish
Published 06.05.2010
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material to program a selected memory cell. The write driver may be configured to provide the program current such that the program current has a plurality of steps. The control unit may be configured to receive step information for adjusting a magnitude and a width of each step of the program current during a test operation and provide the step information to the write driver during a normal operation.
Bibliography:Application Number: US20090654338