DISLOCATION ENGINEERING USING A SCANNED LASER

A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semicondu...

Full description

Saved in:
Bibliographic Details
Main Authors SCHWARZ KLAUS W, SCOTT J. CAMPBELL, LAI CHUNG WOH, MADAN ANITA, LIU XIAO HU
Format Patent
LanguageEnglish
Published 01.04.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
IRRADIATION DEVICES
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
Online AccessGet full text

Cover

More Information
Summary:A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
Bibliography:Application Number: US20080242990