NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS

A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a fir...

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Main Authors MITANI YUICHIRO, YASUDA NAOKI, NAKASAKI YASUSHI, SHIMIZU TATSUO, KOIKE MASAHIRO, NISHIYAMA AKIRA
Format Patent
LanguageEnglish
Published 04.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
Bibliography:Application Number: US20090403493