METHOD OF FABRICATING A BIPOLAR TRANSISTOR

The invention provides a method for fabricating a bipolar transistor applying a standard shallow trench isolation fabrication method to simultaneously form a vertical bipolar transistor (29) or a lateral bipolar transistor (49) in a first trench (5, 50) and a shallow trench isolation region (27, 270...

Full description

Saved in:
Bibliographic Details
Main Authors DONKERS JOHANNES JOSEPHUS THEODORUS MARIN, VAN NOORT WIBO DANIEL, HIJZEN ERWIN
Format Patent
LanguageEnglish
Published 25.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The invention provides a method for fabricating a bipolar transistor applying a standard shallow trench isolation fabrication method to simultaneously form a vertical bipolar transistor (29) or a lateral bipolar transistor (49) in a first trench (5, 50) and a shallow trench isolation region (27, 270) in a second trench (7, 70). Further, the fabrication method may simultaneously form a vertical bipolar transistor (27) in the first trench (5, 50), a lateral bipolar transistor (49) in a third trench and a shallow trench isolation region (27, 270) in the second trench (7, 70).
Bibliography:Application Number: US20060913048