CMOS IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
A CMOS image sensor is disclosed. The image sensor includes a plurality of polysilicon patterns provided on a silicon epitaxial layer which correspond to the location of a plurality of photodiodes provided in a dummy pixel area, a silicide layer of metal with a high melting point provided on the plu...
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Main Author | |
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Format | Patent |
Language | English |
Published |
25.02.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A CMOS image sensor is disclosed. The image sensor includes a plurality of polysilicon patterns provided on a silicon epitaxial layer which correspond to the location of a plurality of photodiodes provided in a dummy pixel area, a silicide layer of metal with a high melting point provided on the plurality of the polysilicon patterns, a device protecting layer and a planarization layer provided on the silicon epitaxial layer and silicide layer, and a plurality of microlenses on the planarization layer which correspond to the location of the silicide layer. |
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Bibliography: | Application Number: US20090607896 |