HIGH DENSITY PLASMA DIELECTRIC DESPOSITION FOR VOID FREE GAP FILL

A process for void free deposition of dielectric films over high aspect ratio structures using HDP CVD. In a dielectric liner deposition step and the etch to deposition ratio is increased and the deposition pressure is reduced to reduce the aspect ratio of the gap and to deposit a dielectric sidewal...

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Bibliographic Details
Main Authors GALLEGOS JOSEPH A, MICKLER EDWARD L, YUE DUOFENG, WOFFORD BILL ALAN
Format Patent
LanguageEnglish
Published 18.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for void free deposition of dielectric films over high aspect ratio structures using HDP CVD. In a dielectric liner deposition step and the etch to deposition ratio is increased and the deposition pressure is reduced to reduce the aspect ratio of the gap and to deposit a dielectric sidewall on the gap with a significant slope.
Bibliography:Application Number: US20090540130