OPTICAL SEMICONDUCTOR DEVICE

An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantu...

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Main Authors KIBE MICHIYA, UCHIYAMA YASUHITO, NISHINO HIRONORI, NAGASHIMA MITSUHIRO, YAMASHITA HIROYASU, DOSHIDA MINORU, MATSUKURA YUSUKE
Format Patent
LanguageEnglish
Published 11.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
MEASURING
NANOTECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TESTING
TRANSPORTING
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Summary:An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.
Bibliography:Application Number: US20090535263