SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

A semiconductor device includes an insulating film including oxygen formed over a semiconductor substrate, a recess formed in the insulating film, a refractory metal film formed on the inner wall of the recess, a metal film including copper, manganese, and nitrogen formed on the refractory metal fil...

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Main Authors OHTSUKA NOBUYUKI, NAKAO YOSHIYUKI, HANEDA MASAKI, SUNAYAMA MICHIE, TABIRA TAKAHIRO, SHIMIZU NORIYOSHI
Format Patent
LanguageEnglish
Published 31.12.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes an insulating film including oxygen formed over a semiconductor substrate, a recess formed in the insulating film, a refractory metal film formed on the inner wall of the recess, a metal film including copper, manganese, and nitrogen formed on the refractory metal film, and a copper film formed on the metal film to fill in the recess.
Bibliography:Application Number: US20090431944