MEMORY DEVICE AND METHOD

During first portion of a first read cycle determining that a first input of a sense amplifier is to receive information based upon a state of a storage cell during a first portion of a read cycle, and determining that a conductance at the first input is substantially equal to a conductance at a sec...

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Bibliographic Details
Main Authors MORTON BRUCE LEE, VANBUSKIRK MICHAEL
Format Patent
LanguageEnglish
Published 10.12.2009
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:During first portion of a first read cycle determining that a first input of a sense amplifier is to receive information based upon a state of a storage cell during a first portion of a read cycle, and determining that a conductance at the first input is substantially equal to a conductance at a second input of the sense amplifier during the first portion. A plurality of NAND string modules are connected to a global bit line of a memory device that includes a memory column where a plurality of NAND strings and a buffer are formed.
Bibliography:Application Number: US20080134898