MAGNETIC JUNCTION MEMORY ARRAY

• Main Authors: XI HAIWEN, XUE SONG S
• Format: Patent
• Language: English
• Published: 22.10.2009
• Subjects: INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; PHYSICS

A magnetic junction memory array and methods of using the same are described. The magnetic junction memory array includes a plurality of electrically conductive word lines extending in a first direction, a plurality of electrically conductive bit lines extending in a second direction and forming a cross-point array with the plurality of electrically conductive word lines, and a memory cell proximate to, at least selected, cross-points forming a magnetic junction memory array. Each memory cell includes a magnetic pinned layer electrically between a magnetic bit and an isolation transistor. The isolation transistor has a current source and a gate. The current source is electrically coupled to the cross-point bit line and the gate is electrically coupled to the cross-point word line. An electrically conductive cover layer is disposed on and in electrical communication with the magnetic bits.