SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Author: TSUNEDA MASAYUKI
• Format: Patent
• Language: English
• Published: 08.10.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A semiconductor manufacturing apparatus comprises: a substrate process chamber accommodating a substrate; a member heating the substrate, wherein the semiconductor manufacturing apparatus is a substrate processing apparatus for forming a film on the substrate by alternately supplying at least two process gases that react with each other to the substrate process chamber; gas supply units configured to supply the process gases independently; a cleaning gas supply source containing a cleaning gas for supplying the cleaning gas through the gas supply units; an exhaust control unit exhausting gas from the substrate process chamber through an exhaust pipe; an exhaust pipe heating unit heating the exhaust pipe; and a control unit controlling the exhaust pipe heating unit to keep the exhaust pipe higher than a predetermined temperature while a cleaning gas is exhausted from the substrate process chamber through the exhaust pipe by the exhaust control unit after the substrate is processed.