EDGE ETCHED SILICON WAFERS

The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

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Bibliographic Details
Main Authors DOANE THOMAS E, SCHMIDT JUDITH A, ERK HENRY F, HOLLANDER EUGENE R, ALBRECHT PETER D, VANDAMME ROLAND R, ZHANG GUOQIANG (DAVID)
Format Patent
LanguageEnglish
Published 01.10.2009
Subjects
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
PERFORMING OPERATIONS
TRANSPORTING
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Summary:The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
Bibliography:Application Number: US20090415555