Multi-bit memory device using multi-plug

A memory device may include a cathode, an anode, a link connected to the anode, and a first connection element that connects the link to the cathode. The link and the anode may be located in a position lower than that of the cathode or the link and the anode may be located in a position higher than...

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Bibliographic Details
Main Authors KIM DEOK-KEE, JOO YOUNGANG, SUNG JUNG-HUN, JUNG SUNG-YUP, YOU HA-YOUNG, HWANG SOO-JUNG
Format Patent
LanguageEnglish
Published 10.09.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A memory device may include a cathode, an anode, a link connected to the anode, and a first connection element that connects the link to the cathode. The link and the anode may be located in a position lower than that of the cathode or the link and the anode may be located in a position higher than that of the cathode. Also, the cathode, the anode, the link, and the first connection element may be formed on the same plane.
Bibliography:Application Number: US20090379894