ELECTRODE STRUCTURE OF MEMORY CAPACITOR AND MANUFACTURING METHOD THEREOF

After a fabrication process intended to miniaturize semiconductor devices, a surface area of a stack capacitor in a random access memory (RAM) is significantly reduced and capacity thereof is thus decreased, which in turn causes the capacitor not able to function properly. The present invention prov...

Full description

Saved in:
Bibliographic Details
Main Authors CHEN YUNIAO, CHENG HSIENIE, LU SU-TSAI, CHEN WEN-HWA
Format Patent
LanguageEnglish
Published 10.09.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:After a fabrication process intended to miniaturize semiconductor devices, a surface area of a stack capacitor in a random access memory (RAM) is significantly reduced and capacity thereof is thus decreased, which in turn causes the capacitor not able to function properly. The present invention provides a composite lower electrode structure consisting of an exterior annular pipe and a central pillar having concave-convex surfaces to increase a surface area of the capacitor within a limited memory cell so as to enhance the capacity. To reinforce intensity of a structure of the capacitor, the exterior annular pipe has an elliptic radial cross section and a thicker thickness along a short axis direction.
Bibliography:Application Number: US20080205935