HIGH-Z STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND ELECTRON BEAM LITHOGRAPHIC FABRICATION LEVELS

• Main Authors: MCNAB SHAREE JANE, HERGENROTHER JOHN MICHAEL, TOPOL ANNA, ROOKS MICHAEL J, FRIED DAVID MICHAEL
• Format: Patent
• Language: English
• Published: 27.08.2009
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

A structure for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target. The structure including a first trench in a semiconductor substrate, the first trench extending from a top surface of the substrate into the substrate a first distance; an electron back-scattering layer in a bottom of the first trench; a dielectric capping layer in the trench over the back-scattering layer; and a second trench in the substrate, the second trench extending from the top surface of the substrate into the substrate a second distance, the second distance less than the first distance.