Reduced Leakage Current Field-Effect Transistor Having Asymmetric Doping And Fabrication Method Therefor

• Main Authors: SAHA SAMAR K, KAPOOR ASHOK K
• Format: Patent
• Language: English
• Published: 20.08.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Reduced leakage current field-effect transistors and fabrication methods. Semiconductor device including substrate of first conductivity type, first well and second well of second conductivity type in substrate, channel of second conductivity type between first well and second well in substrate, and gate region of first conductivity type within channel, wherein gate region is electrically operable to modulate depletion width of channel. First well may be a drain region and the second well may be a source region. Channel includes first link region between gate region and first well or drain region and second link region between the gate region and second well or source region; wherein first link region is of second conductivity type of at least two doping densities. First link region is higher doped in a portion adjacent to drain region than in another portion adjacent to gate region. Method of fabricating a reduced leakage current FET.