VIA BOTTOM CONTACT AND METHOD OF MANUFACTURING SAME

A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further incl...

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Bibliographic Details
Main Authors COWLEY ANDREW P, LI BAOZHEN, CLEVENGER LAWRENCE A, GILL JASON P, CHANDA KAUSHIK, YANG CHIHAO
Format Patent
LanguageEnglish
Published 13.08.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
Bibliography:Application Number: US20090431289