Method of manufacturing a MOS transistor
A method of manufacturing a MOS transistor, in which, a tri-layer photo resist layer is used to form a patterned hard mask layer having a sound shape and a small size, and the patterned hard mask layer is used to form a gate. Thereafter, by forming and defining a cap layer, a recess is formed throug...
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Main Authors | , , , , , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
23.07.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing a MOS transistor, in which, a tri-layer photo resist layer is used to form a patterned hard mask layer having a sound shape and a small size, and the patterned hard mask layer is used to form a gate. Thereafter, by forming and defining a cap layer, a recess is formed through etching in the substrate. The patterned hard mask is removed after epitaxial layers are formed in the recesses. Accordingly, a conventional poly bump issue and an STI oxide loss issue leading to contact bridge can be avoided. |
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Bibliography: | Application Number: US20080017065 |