Method for producing bonded wafer

In the method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer and then thinning the wafer for active layer, when oxygen ions are implanted into the wafer for active layer, the implantation step is divided into two stages conducted under specified conditi...

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Bibliographic Details
Main Authors ENDO AKIHIKO, NISHIHATA HIDEKI, MORIMOTO NOBUYUKI, OKUDA HIDEHIKO
Format Patent
LanguageEnglish
Published 23.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In the method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer and then thinning the wafer for active layer, when oxygen ions are implanted into the wafer for active layer, the implantation step is divided into two stages conducted under specified conditions.
Bibliography:Application Number: US20090321725