METHOD FOR MANUFACTURING INTEGRATED CIRCUIT AND SEMICONDUCTOR STRUCTURE OF INTEGRATED CIRCUIT

A method for manufacturing an integrated circuit includes: performing ion implantation on a wafer to make a chip in the wafer have an original doping concentration; dividing the chip into a plurality of regions; and controlling at least one region of plurality of the regions to not have further ion...

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Bibliographic Details
Main Authors CHENG RUI-HUANG, LIN CHIEN-MING, YU CHI-LU, HUANG RUEI-HAO
Format Patent
LanguageEnglish
Published 02.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing an integrated circuit includes: performing ion implantation on a wafer to make a chip in the wafer have an original doping concentration; dividing the chip into a plurality of regions; and controlling at least one region of plurality of the regions to not have further ion implantation performed thereon, thereby making the region only have single ion implantation performed thereon utilize the original doping concentration as a doping concentration of N-wells or P-wells of transistors in the region. Additionally, the region corresponds to signal output circuits of the integrated circuit.
Bibliography:Application Number: US20080968205