Semiconductor on insulator (SOI) switching circuit

A disclosed embodiment is a switching circuit including a number of transistors fabricated in a device layer situated over a buried oxide layer and a bulk semiconductor layer. Each transistor has a source/drain junction that does not contact the buried oxide layer, thus forming a source/drain juncti...

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Bibliographic Details
Main Authors ZWINGMAN ROBERT L, RACANELLI MARCO
Format Patent
LanguageEnglish
Published 11.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
TELEPHONIC COMMUNICATION
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Summary:A disclosed embodiment is a switching circuit including a number of transistors fabricated in a device layer situated over a buried oxide layer and a bulk semiconductor layer. Each transistor has a source/drain junction that does not contact the buried oxide layer, thus forming a source/drain junction capacitance. The disclosed switching circuit also includes at least one trench extending through the device layer and contacting a top surface of the buried oxide layer, thus electrically isolating at least one of the transistors in the switching circuit so as to reduce voltage and current fluctuations in the device layer. The disclosed switching circuit may be coupled to a power amplifier or a low noise amplifier and an antenna in a wireless communications device, and be controlled by a switch control signal in the wireless communications device.
Bibliography:Application Number: US20080286472