Vapor Deposited Film by Plasma Cvd Method

A vapor deposited film is formed on a base material surface by a plasma CVD method where an organic metal compound and an oxidizing gas are used as a reactive gas. The vapor deposited film has three sections of a base material side adhesive layer having 5% or more carbon, a barrier intermediate laye...

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Bibliographic Details
Main Authors INAGAKI HAJIME, KITOU SATORU, NAKAYAMA MEGUMI, NAKANO RYUTA, IEKI TOSHIHIDE
Format Patent
LanguageEnglish
Published 11.06.2009
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Summary:A vapor deposited film is formed on a base material surface by a plasma CVD method where an organic metal compound and an oxidizing gas are used as a reactive gas. The vapor deposited film has three sections of a base material side adhesive layer having 5% or more carbon, a barrier intermediate layer having less than 5% carbon, and a surface protection film having 5% or more carbon, by element concentration with respect to the total amount of three elements of a metal element (M), oxygen (O) and carbon (C) derived from the organic metal compound. The vapor deposited film has excellent adhesiveness to the base material, and has excellent resistance to water, especially to alkaline aqueous solutions, as well.
Bibliography:Application Number: US20060884772