Sensor for a magnetic memory device and method of manufacturing the same

The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous III-V material layer on the silicon substrate, heating the amorphous III-V material layer, and epitaxially growing III-V material on the amorphous III-V material layer.

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Bibliographic Details
Main Authors KUPER CYNTHIA A, IMAI DARREN
Format Patent
LanguageEnglish
Published 28.05.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous III-V material layer on the silicon substrate, heating the amorphous III-V material layer, and epitaxially growing III-V material on the amorphous III-V material layer.
Bibliography:Application Number: US20080289952