Sensor for a magnetic memory device and method of manufacturing the same
The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous III-V material layer on the silicon substrate, heating the amorphous III-V material layer, and epitaxially growing III-V material on the amorphous III-V material layer.
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
28.05.2009
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Subjects | |
Online Access | Get full text |
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Summary: | The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous III-V material layer on the silicon substrate, heating the amorphous III-V material layer, and epitaxially growing III-V material on the amorphous III-V material layer. |
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Bibliography: | Application Number: US20080289952 |