Solution for immersion exposure and immersion exposure method

The object is to resolve a finer pattern with a narrower line/space width by immersion lithography technology in the manufacture of a semiconductor or the like. A liquid for use in immersion exposure includes a saturated hydrocarbon compound as a main component, wherein the content of an impurity or...

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Bibliographic Details
Main Authors NAKAYAMA NORIO, KAGAYAMA AKIFUMI, TAMATANI HIROAKI
Format Patent
LanguageEnglish
Published 21.05.2009
Subjects
ADHESIVES
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
DYES
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
MATERIALS THEREFOR
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
ORIGINALS THEREFOR
PAINTS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
POLISHES
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Summary:The object is to resolve a finer pattern with a narrower line/space width by immersion lithography technology in the manufacture of a semiconductor or the like. A liquid for use in immersion exposure includes a saturated hydrocarbon compound as a main component, wherein the content of an impurity or impurities having an unsaturated bond or a heteroatom in its structure is respectively as follows: (i) 2 mug/mL or less in total for a compound having a conjugated unsaturated bond; (ii) 30 mug/mL or less in total for a compound having no conjugated unsaturated bond but having a non-conjugated unsaturated bond; (iii) 15 mug/mL or less in total for amines having no unsaturated bond; and (iv) 100 mug/mL or less in total for a heterocyclic compound, alcohols, ethers and a halogen-containing compound, other than above compounds (i) to (iii).
Bibliography:Application Number: US20060991106