SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING

A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into t...

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Bibliographic Details
Main Author WEBER HANS MARTIN
Format Patent
LanguageEnglish
Published 02.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures.
Bibliography:Application Number: US20070866151