SEMICONDUCTOR DEVICE WITH RELATIVELY HIGH BREAKDOWN VOLTAGE AND MANUFACTURING METHOD

A semiconductor device includes at least one active component (18) having a p-n junction (26) on the semiconductor substrate in an active region (19) of the semiconductor substrate (4). A shallow trench isolation pattern is used to form a plurality of longitudinally extending shallow trenches (12) c...

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Bibliographic Details
Main Authors HERINGA ANCO, SONSKY JAN
Format Patent
LanguageEnglish
Published 19.03.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes at least one active component (18) having a p-n junction (26) on the semiconductor substrate in an active region (19) of the semiconductor substrate (4). A shallow trench isolation pattern is used to form a plurality of longitudinally extending shallow trenches (12) containing insulator (14). These trenches define a plurality of longitudinal active stripes (10) between the shallow trenches (12). The shallow trench isolation depth (dspi) is greater than the junction depth (dsO of the longitudinal active stripes and the width (wsO of the active stripes (10) is less than the depletion length (ldepi) of the p-n junction.
Bibliography:Application Number: US20060917608