Method of measuring thin layers using sims
A method for measuring the thickness of a layer is provided, comprising (a) providing a structure (101) comprising a first layer disposed on a second layer; (b) impinging (103) the structure with a first ion beam comprising a first isotope, thereby sputtering off a portion of the first layer which c...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
05.02.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A method for measuring the thickness of a layer is provided, comprising (a) providing a structure (101) comprising a first layer disposed on a second layer; (b) impinging (103) the structure with a first ion beam comprising a first isotope, thereby sputtering off a portion of the first layer which contains a second isotope and exposing a portion of the second layer; and (c) determining (105) the thickness of the first layer by measuring the amount of the second isotope which is sputtered off. |
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Bibliography: | Application Number: US20070888576 |