Semiconductor Device and Manufacturing Method Thereof
A semiconductor device is provided. The semiconductor device includes a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed. The semiconductor device also includes a first via plug and a first metal line respectively formed by filling the first...
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Main Author | |
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Format | Patent |
Language | English |
Published |
22.01.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device is provided. The semiconductor device includes a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed. The semiconductor device also includes a first via plug and a first metal line respectively formed by filling the first via hole and the first trench with a first metal, a predetermined scratch being formed on the first metal line; and a second via plug a second metal line respectively formed by filling a second via hole and a second trench with a second metal, the second metal lines being separated. |
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Bibliography: | Application Number: US20080199155 |