Robust ESD LDMOS Device

A semiconductor device includes a gate electrode over a semiconductor substrate, wherein the gate electrode has a gate width direction; a source/drain region in the semiconductor substrate and adjacent the gate electrode, wherein the source/drain region has a first width in a direction parallel to t...

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Bibliographic Details
Main Authors WU KUO-MING, LEE JIAN-HSING, WEI CHI-SAN
Format Patent
LanguageEnglish
Published 08.01.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a gate electrode over a semiconductor substrate, wherein the gate electrode has a gate width direction; a source/drain region in the semiconductor substrate and adjacent the gate electrode, wherein the source/drain region has a first width in a direction parallel to the gate width direction; and a bulk pick-up region in the semiconductor substrate and abutting the source/drain region. The bulk pick-up region and the source/drain region have opposite conductivity types. The bulk pick-up region has a second width in the width direction, and wherein the second width is substantially less than the first width.
Bibliography:Application Number: US20070773364