Process For The Continuous Production Of Polycrystalline High-Purity Silicon Granules

High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the...

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Bibliographic Details
Main Authors WEIDHAUS DIETER, HAUSWIRTH RAINER, HERTLEIN HARALD
Format Patent
LanguageEnglish
Published 04.12.2008
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Summary:High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
Bibliography:Application Number: US20080111291