SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device includes a semiconductor substrate; a source area, a channel area and a drain area vertically stacked on the semiconductor substrate; and a gate formed in both side walls of the stacked source area, channel area and drain area under interposition of a gate insulation layer.

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Bibliographic Details
Main Author CHA SEON YONG
Format Patent
LanguageEnglish
Published 13.11.2008
Subjects
ELECTRICITY
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Summary:A semiconductor device includes a semiconductor substrate; a source area, a channel area and a drain area vertically stacked on the semiconductor substrate; and a gate formed in both side walls of the stacked source area, channel area and drain area under interposition of a gate insulation layer.
Bibliography:Application Number: US20070765670