METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION BARRIER FILM

Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased...

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Bibliographic Details
Main Authors LEE JONG-MYEONG, CHOI GIL-HEYUN, HONG JONG-WON, CHOI KYUNG-IN, LEE HYUN-BAE
Format Patent
LanguageEnglish
Published 06.11.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.
Bibliography:Application Number: US20080112135