PATTERN FORMING METHOD USED IN SEMICONDUCTOR DEVICE MANUFACTURING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A pattern forming method includes forming a first anti-reflection coating on a substrate, the substrate having an uneven surface; forming a second anti-reflection coating on the first anti-reflection coating, the first anti-reflection coating having an uneven surface, and the second anti-reflection...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
09.10.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A pattern forming method includes forming a first anti-reflection coating on a substrate, the substrate having an uneven surface; forming a second anti-reflection coating on the first anti-reflection coating, the first anti-reflection coating having an uneven surface, and the second anti-reflection coating planarizing the uneven surface of the first anti-reflection coating; forming an intermediate layer film on the second anti-reflection coating; forming a resist film on the intermediate-layer film; patterning the resist film to form a resist pattern; forming an intermediate-layer pattern by etching the intermediate-layer film using the resist pattern as a mask; and forming an under-layer pattern by etching the first and second anti-reflection coatings using the intermediate-layer pattern as a mask. |
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Bibliography: | Application Number: US20070944170 |