Single electron transistor and method of manufacturing the same

A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion of the nanowire channel, a qu...

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Bibliographic Details
Main Authors SUK SUNG-DAE, YEOH YUN-YOUNG, LI MING, YEO KYOUNG-HWAN
Format Patent
LanguageEnglish
Published 09.10.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion of the nanowire channel, a quantum dot in the portion of the nanowire channel insulated by the plurality of oxide channel areas, and a gate electrode surrounding the quantum dot.
Bibliography:Application Number: US20070905758