Capacitorless DRAM and method of manufacturing and operating the same

Provided are a capacitorless dynamic random access memory (DRAM) and a method of manufacturing and operating the capacitorless DRAM. The capacitorless DRAM includes a substrate having a first dopant region formed on the upper part thereof, a first protrusion unit formed on the substrate, a first gat...

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Bibliographic Details
Main Authors JIN YOUNG-GU, SHIN JAI-KWANG
Format Patent
LanguageEnglish
Published 18.09.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:Provided are a capacitorless dynamic random access memory (DRAM) and a method of manufacturing and operating the capacitorless DRAM. The capacitorless DRAM includes a substrate having a first dopant region formed on the upper part thereof, a first protrusion unit formed on the substrate, a first gate and a second gate formed on the substrate on both sides of the first protrusion unit, having a height lower than the first protrusion unit, and an insulating material layer interposed between the substrate and the first and second gates and between the first protrusion unit and the first and second gates, wherein a second dopant region is formed on the upper part of the first protrusion unit.
Bibliography:Application Number: US20080007738