Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of Manufacture

• Main Authors: ELBANHAWY ALAN, CHALLA ASHOK, KOCON CHRISTOPHER B, SAPP STEVEN P, WANG QI, SANI BABAK S, WILSON PETER H
• Format: Patent
• Language: English
• Published: 21.08.2008
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; CALCULATING; COMPUTING; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; PHYSICS; SEMICONDUCTOR DEVICES

A method for controlling the thickness of an expitaxially grown semiconductor material includes providing a semiconductor substrate that is doped by dopants of a first type; forming a buffer layer atop the semiconductor substrate, the buffer layer being doped with dopants of a second type that has much less diffusivity relative to that of dopants of the first type and forming the expitaxially grown layer atop the buffer layer to a desired thickness. The buffer layer, which acts to counter an up-diffusion of the dopants of the first type from the substrate into the epitaxially grown layer, can be doped with arsenic or carbon or both arsenic and carbon. A semiconductor device includes the buffer layer to counter an up-diffusion of the dopants of the first type from the substrate into the epitaxially grown layer.