Semiconductor device including a TCAM having a storage element formed with a DRAM

In order to improve the discharging speed of potential from a match line, a semiconductor device includes a capacitor, a memory transistor having a source/drain region connected to a storage node of the capacitor, a search transistor having a gate electrode connected to the storage node, and a stack...

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Bibliographic Details
Main Authors KUBO SHUNJI, AMO ATSUSHI
Format Patent
LanguageEnglish
Published 31.07.2008
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:In order to improve the discharging speed of potential from a match line, a semiconductor device includes a capacitor, a memory transistor having a source/drain region connected to a storage node of the capacitor, a search transistor having a gate electrode connected to the storage node, and a stacked contact connecting a match line and the source/drain region of the search transistor. The storage node has a configuration in which a sidewall of the storage node facing the match line partially recedes away from the stacked contact such that a portion of the sidewall in front of the stacked contact in plan view along the direction of the match line is located farther away from the stacked contact than the remaining portion of the sidewall.
Bibliography:Application Number: US20070882166