Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, includes the following steps: providing a substrate with an insulated surface; forming an amorphous silicon layer on the insulated surface; imposing a catalytic metal element on the amorphous silicon layer; heating and catalyzing the amorphous silico...

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Bibliographic Details
Main Authors LIN CHIING, HU GUO-REN, HOU CHIH-YUAN, WU YEWCHUNG-SERMON
Format Patent
LanguageEnglish
Published 22.05.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method of a semiconductor device, includes the following steps: providing a substrate with an insulated surface; forming an amorphous silicon layer on the insulated surface; imposing a catalytic metal element on the amorphous silicon layer; heating and catalyzing the amorphous silicon layer to form a poly-silicon layer; forming a diffusion layer and a gettering material layer on the poly-silicon layer in order; proceeding an annealing process on the gettering material layer and the poly-silicon layer to move the residual metal catalyst element from the poly-silicon layer toward the gettering material layer due to the concentration gradient; and removing the diffusion layer and the gettering material layer.
Bibliography:Application Number: US20070812483