METHOD OF MANUFACTURING HIGH VOLTAGE DEVICE

A method of manufacturing a high voltage device includes forming a junction region in a semiconductor substrate. An insulating layer is formed over the semiconductor substrate. A portion of the insulating layer is etched so that the junction region is exposed. Arsenic is implanted into the exposed j...

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Bibliographic Details
Main Authors SEO JI HYUN, LEE DONG KEE
Format Patent
LanguageEnglish
Published 01.05.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a high voltage device includes forming a junction region in a semiconductor substrate. An insulating layer is formed over the semiconductor substrate. A portion of the insulating layer is etched so that the junction region is exposed. Arsenic is implanted into the exposed junction region to form plug ion implantation regions. A plug is formed on the plug ion implantation regions into which arsenic has been implanted.
Bibliography:Application Number: US20060617677