BUMP ELECTRODE INCLUDING PLATING LAYERS AND METHOD OF FABRICATING THE SAME

In one aspect, a bump electrode of a semiconductor device is formed by providing a substrate including a pad electrode, forming a seed layer over the pad electrode, and forming a mask layer over the seed layer which includes an opening aligned over the pad electrode. A barrier plating layer is elect...

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Bibliographic Details
Main Authors LEE CHUNG-SUN, KANG UN-BYOUNG, KWON WOON-SEONG, JANG HYANG-SUN, KWON YONG-HWAN
Format Patent
LanguageEnglish
Published 10.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one aspect, a bump electrode of a semiconductor device is formed by providing a substrate including a pad electrode, forming a seed layer over the pad electrode, and forming a mask layer over the seed layer which includes an opening aligned over the pad electrode. A barrier plating layer is electroplated within the opening over the seed layer, and a bump plating layer is electroplated over the barrier plating layer. The mask layer is removed, and the seed layer is etched using the bump plating layer as a mask.
Bibliography:Application Number: US20070850184