Method for forming a semiconductor device having a cylindrical hole in a dielectric film

Anisotropic dry etching uses a hard mask as an etching mask and a mixture of fluorocarbon, oxygen and rare gas as an etching gas, and effects etching of a dielectric film and deposition of deposits on the hard mask for suppressing reduction of the thickness of the hard mask. A higher deposition rate...

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Bibliographic Details
Main Author IKEDA TAKENOBU
Format Patent
LanguageEnglish
Published 03.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Anisotropic dry etching uses a hard mask as an etching mask and a mixture of fluorocarbon, oxygen and rare gas as an etching gas, and effects etching of a dielectric film and deposition of deposits on the hard mask for suppressing reduction of the thickness of the hard mask. A higher deposition rate of the deposits is employed during the middle stage of the etching than during the initial stage and final stage of the etching. The higher deposition rate suppresses the reduction of the remaining thickness of the hard mask especially during the middle stage.
Bibliography:Application Number: US20070905073