AVALANCHE PHOTODIODE

A photodiode designed to capture incident photons includes a stack of at least three superposed layers of semiconductor materials having a first conductivity type The stack includes: an interaction layer designed to interact with incident photons so as to generate photocarriers, a collection layer t...

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Bibliographic Details
Main Author ROTHMAN JOHAN
Format Patent
LanguageEnglish
Published 20.03.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Summary:A photodiode designed to capture incident photons includes a stack of at least three superposed layers of semiconductor materials having a first conductivity type The stack includes: an interaction layer designed to interact with incident photons so as to generate photocarriers, a collection layer to collect the photocarriers; a confinement layer designed to confine the photocarriers in the collection layer. The collection layer has a band gap less than the band gaps of the interaction layer and confinement layer. The photodiode also includes a region which extends transversely relative to the planes of the layers. The region is in contact with the collection layer and confinement layer and has a conductivity type opposite to the first conductivity type so as to form a p-n junction with the stack.
Bibliography:Application Number: US20070853871