SEMICONDUCTOR WAFER FRONT SIDE PROTECTION

There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region...

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Bibliographic Details
Main Authors KRYWANCZYK TIMOTHY C, ABRAMS ALLAN D, BROUILLETTE DONALD W, DANAHER JOSEPH D, STONE IVAN J, WHALEN MATTHEW R, LAMOTHE RENE A
Format Patent
LanguageEnglish
Published 13.03.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.
Bibliography:Application Number: US20070926668