Thin film transistor and method of manufacturing thin film and thin film transistor

A method of manufacturing a thin film including the steps of: providing a film manufacturing apparatus including a first discharge electrode, a second discharge electrode placed opposed to the first discharge electrode and a high frequency power source, which supplies high frequency power between th...

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Bibliographic Details
Main Authors HIRAO YUYA, OKADA MASAKAZU
Format Patent
LanguageEnglish
Published 06.03.2008
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Summary:A method of manufacturing a thin film including the steps of: providing a film manufacturing apparatus including a first discharge electrode, a second discharge electrode placed opposed to the first discharge electrode and a high frequency power source, which supplies high frequency power between the first discharge electrode and a second discharge electrode; placing a substrate on which a conductive line pattern has been formed on the second discharge electrode; applying the high frequency power from the high frequency power supply while generating plasma by using discharged gas under an atmospheric pressure or a near-atmospheric pressure; and forming a thin film on the substrate, wherein a space ratio (W/L) of a line width W (W>0) of the conductive line pattern to a spatial distance L between the first discharge electrode and the substrate is set not more than 0.1.
Bibliography:Application Number: US20070894826