METHOD FOR REMOVING NANOCLUSTERS FROM SELECTED REGIONS
A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the firs...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
31.01.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer. |
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Bibliography: | Application Number: US20060459837 |