METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC

A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectri...

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Bibliographic Details
Main Authors QUINLIVAN JAMES J, BURNHAM JAY S, WARD BETH A, NAKOS JAMES S, ROQUE BERNIE JR, SHANK STEVEN M
Format Patent
LanguageEnglish
Published 17.01.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
Bibliography:Application Number: US20070778238