Making thin film transistors on display panels

• Main Authors: CHANG YOUNG-JIN, JUNG KWAN-WOOK, CHOI YOON-SEOK, SHIM SEUNG-HWAN, CHOI JAE-BEOM
• Format: Patent
• Language: English
• Published: 10.01.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A thin film transistor for a display device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a polycrystalline semiconductor formed on the gate insulating layer and overlapping the gate electrode, a source electrode partially overlapping the polycrystalline semiconductor, and a drain electrode partially overlapping the polycrystalline semiconductor. The polycrystalline semiconductor includes a plurality of first polycrystalline semiconductors that are doped with conductive impurities and a plurality of second polycrystalline semiconductors that are not doped with conductive impurities, and the first polycrystalline semiconductors are disposed between and connected in series with adjacent ones of the second polycrystalline semiconductors.