Composite integrated semiconductor device

A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an ou...

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Bibliographic Details
Main Authors ICHIMURA TAKESHI, KIUCHI SHIN, YAEZAWA NAOKI, FURUHATA SHOICHI, YOSHIDA KAZUHIKO
Format Patent
LanguageEnglish
Published 13.12.2007
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Summary:A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.
Bibliography:Application Number: US20070723356