SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING
Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
29.11.2007
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Subjects | |
Online Access | Get full text |
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Summary: | Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide. |
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Bibliography: | Application Number: US20050293261 |