SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING

Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on...

Full description

Saved in:
Bibliographic Details
Main Authors SANKIN IGOR, MERRETT JOSEPH N
Format Patent
LanguageEnglish
Published 29.11.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.
Bibliography:Application Number: US20050293261